slivaco tcad atls
胡歌女票 2019-09-06 07:41:07 go atlas
#
mesh
x.mesh loc=-2.0 spac=1
x.mesh loc=10.0 spac=1
x.mesh loc=22.0 spac=1
y.mesh loc=-0.02 spac=0.02
y.mesh loc=0.50 spac=0.02
#
region number=1 x.min=-2.0 x.max=22 y.min=-0.02 y.max=0 material=Al2O3
region number=2 x.min=-2.0 x.max=22 y.min=0.0 y.max=0.3 user.material=Ga2O3
region number=3 x.min=-2.0 x.max=22 y.min=0.3 y.max=0.5 user.material=Ga2O3
#
electrode name=gate number=1 x.min=8 x.max=11 y.min=-2 y.max=-1.98
electrode name=drain number=2 x.min=20 x.max=22 y.min=0 y.max=0.15
electrode name=source number=3 x.min=-2 x.max=0 y.min=0 y.max=0.15
elec substrate
#
doping uniform conc=7e+10 p.type x.left=-2 x.right=22 y.top=0 y.bottom=0.3
#
doping uniform conc=5e+19 n.type x.left=20 x.right=22 y.top=0 y.bottom=0.15
#
doping uniform conc=5e+19 n.type x.left=-2 x.right=0 y.top=0 y.bottom=0.15
save outfile=nmos5.str
#
material material=Ga2O3 user.group=semiconductor user.default=GaN
permittivity=10.0\
affinity=4.0\
eg300=4.8\
nc300=3.72e18\
nv300=3.72e18\
mun=118\
mup=50\
ni=1.79e-22\
tcon.const =0.13\
#
models
models fldmob srh auger bgn print temperature
#
contact name=gate workfuncton=5.23
#
solve init
log outf=nmos5_0.log
solve name=drain vdrain=0 vfinal=40 vstep=1
log off
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