HY27US08121A手册下载

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FEATURES SUMMARY HIGH DENSITY NAND Flash MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX121A - 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121A Memory Cell Array = (512+16) Bytes x 32 Pages x 4,096 Blocks = (256+8) Words x 32 pages x 4,096 Blocks PAGE SIZE - x8 device : (512 + 16 spare) Bytes : HY27(U/S)S08121A - x16 device: (256 + 8 spare) Words : HY27(U/S)S16121A BLOCK SIZE - x8 device: (16K + 512 spare) Bytes - x16 device: (8K + 256 spare) Words PAGE READ / PROGRAM - Random access: 3.3V: 12us (max.) 1.8V: 15us (max.) - Sequential access: 3.3V device: 50ns (min.) 1.8V device: 60ns (min.) - Page program time: 200us (typ.) COPY BACK PROGRAM MODE - Fast page copy without external buffering FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle: Device Code CHIP ENABLE DON'T CARE - Simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download SERIAL NUMBER OPTION HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions DATA INTEGRITY - 100,000 Program/Erase cycles (with 1bit/512byte ECC) - 10 years Data Retention PACKAGE - HY27(U/S)S(08/16)121A-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27(U/S)S(08/16)121A-T (Lead) - HY27(U/S)S(08/16)121A-TP (Lead Free) - HY27(U/S)S(08/16)121A-S(P) : 48-Pin USOP1 (12 x 17 x 0.65 mm) - HY27(U/S)S(08/16)121A-S (Lead) - HY27(U/S)S(08/16)121A-SP (Lead Free) - HY27(U/S)S(08/16)121A-F(P) : 63-Ball FBGA (9 x 11 x 1.0 mm) - HY27(U/S)S(08/16)121A-F (Lead) - HY27(U/S)S(08/16)121A-FP (Lead Free , 相关下载链接：https://download.csdn.net/download/sytu_chyq/2021921?utm_source=bbsseo