修改128M NAND boot 在WriteMBR 中出现error

[wjf_zjut]

typedef enum _FLASH_TYPE { NAND, NOR } FLASH_TYPE;

typedef struct _FlashInfo
{
FLASH_TYPE flashType;
DWORD dwNumBlocks;
DWORD dwBytesPerBlock;
WORD wSectorsPerBlock;
WORD wDataBytesPerSector;

}FlashInfo, *PFlashInfo;


DWORD g_dwMBRSectorNum = INVALID_ADDR;
FlashInfo g_FlashInfo;


static BOOL WriteMBR()
{
RETAILMSG(1, (TEXT("test\r\n")));
DWORD dwMBRBlockNum = g_dwMBRSectorNum / g_FlashInfo.wSectorsPerBlock;

RETAILMSG(1, (TEXT("WriteMBR: MBR block = 0x%x.\r\n"), dwMBRBlockNum));

memset (g_pbBlock, 0xff, g_dwDataBytesPerBlock);
memset (g_pSectorInfoBuf, 0xff, sizeof(SectorInfo) * g_FlashInfo.wSectorsPerBlock);

// No need to check return, since a failed read means data hasn't been written yet.
ReadBlock (dwMBRBlockNum, g_pbBlock, g_pSectorInfoBuf);

if (!FMD_EraseBlock (dwMBRBlockNum)) {
RETAILMSG (1, (TEXT("CreatePartition: error erasing block 0x%x\r\n"), dwMBRBlockNum));
return FALSE;
}

memcpy (g_pbBlock + (g_dwMBRSectorNum % g_FlashInfo.wSectorsPerBlock) * g_FlashInfo.wDataBytesPerSector, g_pbMBRSector, g_FlashInfo.wDataBytesPerSector);
g_pSectorInfoBuf->bOEMReserved &= ~OEM_BLOCK_READONLY;
g_pSectorInfoBuf->wReserved2 &= ~SECTOR_WRITE_COMPLETED;
g_pSectorInfoBuf->dwReserved1 = 0;

if (!WriteBlock (dwMBRBlockNum, g_pbBlock, g_pSectorInfoBuf)) {
RETAILMSG (1, (TEXT("CreatePartition: could not write to block 0x%x\r\n"), dwMBRBlockNum));
return FALSE;
}

return TRUE;

}
EBOOT运行后，停在了那条除法指令上了（RETAILMSG(1, (TEXT("test\r\n")));能显示然后再也没有调试信息出来，）。g_FlashInfo.wSectorsPerBlock（全局变量）为0X100。我想应该是语法或者是编译等地方配置出错了，差不出，请指点。

[kyzf]

帮顶下。

MARK，学习下、

[wjf_zjut]

在 BOOL WriteMBR() 中事先赋值 g_FlashInfo.wSectorsPerBlock=0x100;
DWORD dwMBRBlockNum = g_dwMBRSectorNum / g_FlashInfo.wSectorsPerBlock;
就能通过了！